 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| CMS10 TOSHIBA SCHOTTKY BARRIER RECTIFIER SCHOTTKY BARRIER TYPE CMS10 Unit:mm SWITHING MODE POWER SUPPLY APPLICATIONS PORTABLE EQUIPMENT BATTERY APPLICATIONS 2 Forward Voltage VFM=0.55V(Max.) Average Forward Current IF(AV)=1.0A Repetitive Peak Reverse Voltage VRRM=40V Small &ThinPackage MAXIMUM RATINGS CHARACTERISTIC Repetitive Peak Reverse 3 .8 4 .7 0 .1 6 SYMBOL Voltage VRRM IF(AV) IFSM Tj Tstg RATING 40 1.0 (Ta=21) 25(50Hz) -40150 UNIT V A A 1.7 2 .4 0.1 1 1 :A n o d e 0 .9 8 Peak One Cycle Surge Forward Current(Non-Repetitive) Junction Temperature 0 Average Forward Current *1 2 :C a th o d e Storage Temperature -40150 *1 Glass-epoxy Substrate(Substrate size:50mm*50mm Soldering land:6mm*6mm) JEDEC EIAJ TOSHIBA Weight:0.023g - ELECTRICAL CHARACTERISTICA(Ta=25) CHARACTERISTIC SYMBOL VFM(1) Peak Forward Voltage VFM(2) VFM(3) Repetitive Peak Reverse Current Junction Capacitance Thermal Resistance IRRM IRRM Cj TEST CONDITION MIN. - TYP. 0.34 0.41 0.47 1.0 8.0 50 - MAX. 0.55 500 60 135 16 UNIT V V V A A pF /W /W /W IFM=0.1A IFM=0.5A IFM=1.0A VRRM=5V VRRM=40V VR=10V,f=1.0MHz On ceramic substrate (Solderring Land2mmx2mm) Rth(j-a) On glass-epoxy substrate (Solderrring Land 6mmx6mm) Rth(j-l) - TOSHIBAis continually working to improve the quality and the reliability of its products.nevertheless,semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,when utilizing TOSHIBA products, to observe standards of safety,and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life,bodily injury or damage to property.In developing your designs,plese ensure that TOSHIBA products are used within specified operating ranqes as set forth in the most recent products specifications.Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. The information contained herein is subject to change without notice. 2000-07-18 1/4 0 .6 5 0 .6 5 CMS10 Standard Soldering pad Unit:mm 1.4 3.0 1.4 HANDLING PRECAUTION Schottky barrier diodes are having large-reverse-current-leakage characteristic compare to the other rectifier products.This current leakage and not proper operating temperature or voltage may cause thermal run. Please take forward and reverse loss into consideration when you design. 2.1 2000-07-18 2/4 CMS10 iF-vF 0.8 AVERAGE FORWARD POWER DISSIPATION PF(AV) (W) 10 INSTANTANEOUS FORWARD CURRENT PF(AV)-IF(AV) 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 =60 =120 =180 DC Tj=150 iF (A) 1 75 125 25 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 INSTANTANEOUS FORWARD VOLTAGE VF (v) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 AVERAGE FORWARD CURRENT IF(AV) (A) Ta Max - IF (AV) On Glass-epoxy Substrate(size:50mm*50mm,land size:6mm*6mm) Ta Max - IF (AV) On Ceramic Substrate(size:50mm*50mm) 160 MAXIMUM ALLOWABLE AMBIENT TEMPERATURE Ta MAX ( ) MAXIMUM ALLOWABLE AMBIENT TEMPERATURE Ta MAX ( ) 160 140 120 =180 DC 140 120 100 80 60 40 20 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 AVERAGE FORWARD CURRENT IF(AV) (A) =60 =180 =120 100 80 60 40 20 0 0.0 =60 =120 DC 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 AVERAGE FORWARD CURRENT IF(AV) (A) rth(j-a) - t 1000 TRANSIENT THERMAL IMPEDANCE rth(j-a) ( /W) ON GLASS-EPOXY SUBSTRATE Soldering Land 2.1mmx1.4mm 100 10 ON GLASS-EPOXY SUBSTRATE Soldering Land 6mmx6mm ON CERAMIC SUBSTRATE Soldering Land 2mmx2mm 1 0.1 0.001 0.01 0.1 1 TIME t (s) 10 100 1000 2000-07-18 3/4 CMS10 SURGE FORWARD CURRENT (NON-REPETITIVE) 28 PEAK SURGE FORWARD CURRENT IFSM (A) 1000 JUNCTION CAPACITANCE Cj (pF) Cj-VR TYPICAL f=1MHz Ta=25 24 20 16 12 8 4 0 1 10 NUMBER OF CYCLES Ta=25 f=50Hz 100 10 100 1 10 REVERSE VOLTAGE VR (V) 100 IR-T j 100 PULSE MEASUREMENT 10 1 (TYPICAL) 0.8 AVERAGE REVERSE POWER DISSIPATION PR(AV) W PR(AV) - VR (TYPICAL) REPETITIVE PEAK REVERSE CURRENT IR (mA) 0.7 DC 0.6 0.5 0.4 0.3 0.2 0.1 0.0 60 180 120 240 300 VR=40V VR=30V 0.1 VR=15V VR=20V 0.01 VR=5V VR=10V 0.001 0.0001 0 20 40 60 80 100 120 JUNCTION TEMPERATURE T j ( ) 140 160 0 10 20 30 REVERSE VOLTAGE VR V) 40 2000-07-18 4/4 |
Price & Availability of CMS10
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |